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ZXMN6A11DN8
Electrical characteristics (at T amb = 25°C unless otherwise stated)
Parameter
Symbol
Min.
Typ.
Max. Unit Conditions
Static
Drain-source breakdown voltage V (BR)DSS
60
V
I D = 250 A, V GS =0V
Zero gate voltage drain current
Gate-body leakage
Gate-source threshold voltage
Static drain-source on-state
resistance (*)
Forward transconductance (*)(?)
I DSS
I GSS
V GS(th)
R DS(on)
g fs
1.0
4.9
1.0
100
0.120
0.180
A
nA
V
S
V DS = 60V, V GS =0V
V GS =±20V, V DS =0V
I D = 250 A, V DS =V GS
V GS = 10V, I D = 2.5A
V GS = 4.5V, I D = 2A
V DS = 15V, I D = 2.5A
Dynamic (?)
Input capacitance
Output capacitance
Reverse transfer capacitance
C iss
C oss
C rss
330
35.2
17.1
pF
pF
pF
V DS = 40V, V GS =0V
f=1MHz
Switching (?) (?)
Turn-on-delay time
Rise time
Turn-off delay time
Fall time
Gate charge
t d(on)
t r
t d(off)
t f
Q g
1.95
3.5
8.2
4.6
3.0
ns
ns
ns
ns
nC
V DD = 30V, I D = 2.5A
R G ? 6.0 , V GS = 10V
V DS = 15V, V GS = 5V
I D = 2.5A
Total gate charge
Gate-source charge
Gate drain charge
Q g
Q gs
Q gd
5.7
1.25
0.86
nC
nC
nC
V DS = 15V, V GS = 10V
I D = 2.5A
Source-drain diode
Diode forward voltage (*)
V SD
0.85
0.95
V
T j =25°C, I S = 2.8A,
V GS =0V
Reverse recovery time (?)
Reverse recovery charge (?)
t rr
Q rr
21.5
20.5
ns
nC
T j =25°C, I S = 2.5A,
di/dt=100A/ s
NOTES:
(*) Measured under pulsed conditions. Pulse width = 300 s. Duty cycle
2%.
(?) Switching characteristics are independent of operating junction temperature.
(?) For design aid only, not subject to production testing.
Issue 3 - September 2006
? Zetex Semiconductors plc 2006
4
www.zetex.com
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